Composition and method for polishing memory hard disks exhibiting reduced surface scratching
AssigneeCabot Microelectronics Corporation
InventorKe ZHANG
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Abstract
The invention provides a chemical-mechanical polishing composition comprising (a) wet-process silica, (b) a combination of (i) an alcohol of formula (I) and (ii) an alcohol of formula (II), (c) hydrogen peroxide, (d) a mineral acid, and (e) water, wherein the polishing composition has a pH from about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
Claims21
A chemical-mechanical polishing composition comprising:
- (a) wet-process silica,
- (b) a combination of
- (i) an alcohol of formula (I):
- R1—X—(CH2)m—OH wherein
- R1 is phenyl, pyridyl, HO—(CH2)n—, or C1-C6 alkyl,
- m is an integer from 1 to 6,
- n is an integer from 1 to 6, and
- X is absent or is O, and
- (ii) an alcohol of formula (II):
- R2—NR3—(CH2)o—OH wherein
- R2 is phenyl, pyridyl, H2N—(CH2)p—, or C1-C6 alkyl,
- R3 is hydrogen or C1-C6 alkyl,
- o is an integer from 1 to 6, and
- p is an integer from 1 to 6,
- (c) hydrogen peroxide,
- (d) a mineral acid, and
- (e) water,
- wherein the polishing composition has a pH from about 1 to about 5.
A method of chemically mechanically polishing a substrate comprising:
- (i) providing a substrate,
- (ii) providing a polishing pad,
- (iii) providing a chemical-mechanical polishing composition comprising:
- (a) wet-process silica,
- (b) a combination of
- (i) an alcohol of formula (I):
- R1—X—(CH2)m—OH wherein
- R1 is phenyl, pyridyl, HO—(CH2)n—, or C1-C6 alkyl,
- m is an integer from 1 to 6,
- n is an integer from 1 to 6, and
- X is absent or is O, and
- (ii) an alcohol of formula (II):
- R2—NR3—(CH2)o—OH wherein
- R2 is phenyl, pyridyl, H2N—(CH2)p—, or C1-C6 alkyl,
- R3 is hydrogen or C1-C6 alkyl,
- o is an integer from 1 to 6, and
- p is an integer from 1 to 6,
- (c) hydrogen peroxide,
- (d) a mineral acid, and
- (e) water
- wherein the polishing composition has a pH from about 1 to about 5
- (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and
- (v) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.
A method of chemically mechanically polishing a substrate comprising:
- (i) providing a substrate,
- (ii) providing a polishing pad,
- (iii) providing a chemical-mechanical polishing composition comprising:
- (a) wet-process silica,
- (b) an alcohol of formula (III):
- R1—O—(CH2)m—OH wherein
- R1 is phenyl, pyridyl, HO—(CH2)n—, or C1-C6 alkyl,
- m is an integer from 1 to 6, and
- n is an integer from 1 to 6,
- (c) hydrogen peroxide,
- (d) a mineral acid, and
- (e) water,
- wherein the polishing composition has a pH from about 1 to about 5
- (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and
- (v) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.
Dependencies are inferred from the claim text.