Cross scan proximity correction with ebeam universal cutter
AssigneeIntel Corporation
InventorYAN A. BORODOVSKY
Life of this patent
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Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.
Claims23
(canceled)
A column for an e-beam direct write lithography tool, the column comprising:
- a first blanker aperture array (BAA) comprising a staggered array of openings having a pitch along an array direction, the array direction orthogonal to a scan direction, wherein openings of the staggered array of openings of the first BAA do not overlap with one another when scanned along the scan direction;
- and
- a second BAA comprising a staggered array of openings having the pitch along the array direction, wherein openings of the staggered array of openings of the second BAA overlap with one another when scanned along the scan direction.
A method of forming a pattern for a semiconductor structure, the method comprising:
- forming a pattern of parallel lines above a substrate;
- aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool, wherein the e-beam tool comprises a column having a blanker aperture array (BAA) comprising:
- a first staggered array of openings having a pitch along an array direction, the array direction orthogonal to the scan direction, wherein openings of the first staggered array of openings do not overlap with one another when scanned along the scan direction;
- and
- a second staggered array of openings having the pitch along the array direction, wherein openings of the second staggered array of openings overlap with one another when scanned along the scan direction;
- selecting one array from the first staggered array or the second staggered array;
- and
- forming a pattern of cuts or vias in or above the pattern of parallel lines while scanning the substrate along the scan direction.
A column for e-beam tool, the column comprising:
- an electron source for providing a beam of electrons;
- a limiting aperture coupled with the electron source along a pathway of the beam of the beam of electrons;
- high aspect ratio illumination optics coupled with the limiting aperture along the pathway of the beam of the beam of electrons;
- a shaping aperture coupled with the high aspect ratio illumination optics along the pathway of the beam of the beam of electrons;
- a blanker aperture array (BAA) coupled with the shaping aperture along the pathway of the beam of the beam of electrons, the BAA comprising:
- a first staggered array of openings having a pitch along an array direction, the array direction orthogonal to a scan direction, wherein openings of the first staggered array of openings do not overlap with one another when scanned along the scan direction;
- and
- a second staggered array of openings having the pitch along the array direction, wherein openings of the first staggered array of openings overlap with one another when scanned along the scan direction;
- a final aperture coupled with the BAA along the pathway of the beam of the beam of electrons;
- and
- a sample stage for receiving the beam of electrons.
Dependencies are inferred from the claim text.