Amorphous thin metal film

A method of manufacturing an amorphous thin film stack, comprising:

• depositing a first layer of an amorphous thin metal film to a substrate, the amorphous thin metal film, comprising:
• 5 at % to 90 at % of a metalloid, wherein the metalloid is carbon, silicon, or boron,
• 5 at % to 90 at % of a first metal, wherein the first metal is titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, and
• 5 at % to 90 at % of a second metal, wherein the second metal is titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, and wherein the second metal is different than the first metal;
• and
• forming a second layer on a surface of the first layer, the second layer being an oxide layer, a nitride layer, or a combination thereof, and the second layer having an average thickness of 20 angstroms to 200 microns and having a thickness variance no greater than 15% of the average thickness of the second layer.

A MEMS device, comprising:

• a substrate;
• a first layer of an amorphous thin metal film applied to the substrate, the amorphous thin metal film, comprising:
• 5 at % to 90 at % of a metalloid, wherein the metalloid is carbon, silicon, or boron;
• 5 at % to 90 at % of a first metal, wherein the first metal is titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum;
• and
• 5 at % to 90 at % of second metal, wherein the second metal is titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the second metal is different than the first metal, and
• wherein the metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous thin metal film;
• and
• a second layer formed on a surface of the amorphous thin metal film, the second layer being an oxide layer, a nitride layer, or a combination thereof, and the second layer having an average thickness of 20 angstroms to 200 microns and a having thickness variance no greater than 15% of the average thickness of the second layer.