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US 2019/0104604 A1Published application
Collector pellicle
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShang-Chieh CHIEN, Chi YANG, Jen-Yang CHUNG, Shao-Wei LUO, Tzung-Chi FU, Chun-Kuang CHEN, Li-Jui CHEN, Po-Chung CHENG
Life of this patent
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Abstract
An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.
Claims20
An extreme ultraviolet (EUV) source, comprising
- a collector mirror;
- a drain;
- a droplet generator configured to eject a target material toward the drain;
- a pellicle disposed over the collector mirror, wherein the pellicle is configured to catch debris formed of the target material.
1 more element
An extreme ultraviolet (EUV) source, comprising
- a collector mirror;
- a drain;
- a droplet generator configured to eject a target material toward the drain;
- a plurality of pellicle disposed over the collector mirror, wherein one of the plurality of pellicle is configured to catch debris formed of the target material.
1 more element
A method of improving collector service life in an extreme ultraviolet lithographic system, comprising:
- positioning a first pellicle between a straight line path of tin droplets from a droplet generator to a tin drain and a collector reflecting surface;
- and
- replacing the first pellicle with a second pellicle when the first pellicle's transmittance to extreme ultraviolet light is within an unacceptable range.
Dependencies are inferred from the claim text.