Solid-state imaging sensor and solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorsSoraya Shirini, Takahisa Ueno, Katsuhiko Hanzawa
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Abstract
There is provided a solid-state image sensor including: a selection signal terminal configured to receive a selection signal designated by a pixel address in a two-dimensionally arranged pixel array; a photoelectric conversion section configured to generate a charge in accordance with incident light and store the charge in accordance with the selection signal; and a charge retention section configured to retain the charge stored in the photoelectric conversion section at a prescribed timing.
Claims15
A solid-state image sensor comprising:
- a selection signal terminal configured to receive a selection signal designated by a pixel address in a two-dimensionally arranged pixel array;
- a photoelectric conversion section configured to generate a charge in accordance with incident light and store the charge in accordance with the selection signal;
- and
- a charge retention section configured to retain the charge stored in the photoelectric conversion section at a prescribed timing.
A solid-state imaging device comprising:
- a pixel array in which a plurality of pixels each configured to convert incident light to a pixel signal are two-dimensionally arranged;
- an exposure control circuit configured to supply a selection signal that designates one of the plurality of pixels and control exposure in the designated pixel;
- and
- a reading circuit configured to read the pixel signal from each of the plurality of pixels,
- wherein each of the plurality of pixels includes
- a selection signal terminal configured to receive the selection signal,
- a photoelectric conversion section configured to generate and store a charge in accordance with the incident light,
- a charge release section configured to release the charge stored in the photoelectric conversion section in accordance with the selection signal,
- a charge retention section configured to retain the charge stored in the photoelectric conversion section at a prescribed timing, and
- a charge/voltage conversion section configured to store the charge retained in the charge retention section in order to convert the charge to the pixel signal that is a voltage signal.
Dependencies are inferred from the claim text.