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US 2019/0103866 A1Published application
Semiconductor apparatus
AssigneeFuji Electric Co., Ltd.
InventorYasuaki SAKAI
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Abstract
Reverse recovery current flowing through a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having been turned off can become reverse recovery loss. Reverse recovery loss of the MOSFET is desirably reduced. A semiconductor apparatus including: a MOSFET portion; and a diode portion connected in anti-parallel with the MOSFET portion, wherein reverse recovery current flows through the diode portion after reverse recovery current of the MOSFET portion becomes zero is provided.
Claims9
A semiconductor apparatus comprising:
- a MOSFET portion;
- and
- a diode portion connected in anti-parallel with the MOSFET portion, wherein
- reverse recovery current flows through the diode portion after reverse recovery current of the MOSFET portion becomes zero.
1 more element
Dependencies are inferred from the claim text.