Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates

A method of manufacturing a laser diode device, the method comprising:

• providing a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
• forming an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
• forming an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
• forming a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN;
• forming a p-type material overlying the p-type cladding material;
• forming a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
• forming a first facet on the first end;
• and
• forming a second facet on the second end.

A method of manufacturing a laser diode device, the method comprising:

• providing a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
• forming an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
• forming an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a p-type characteristic and a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
• forming a p-type cladding material overlying the active region, the p-type cladding material being substantially free from AlGaN;
• forming a p-type material overlying the p-type cladding material;
• forming a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end such that a first facet is formed on the first end, and a second facet is formed on the second end,
• wherein the active region comprises at least six quantum well regions.