Semiconductor memory device and method for manufacturing same

A semiconductor memory device, comprising:

• a plurality of first interconnects extending in a first direction, the first interconnects arranged in a second direction crossing to the first direction;
• a plurality of second interconnects extending in the second direction, the second interconnects arranged in the first direction;
• a first layer being provided on at least one of the first interconnects, the first layer including metal material, the first layer extending in the first direction;
• a plurality of stacked films respectively provided between the first interconnects and the second interconnects in a third direction crossing to the first direction and the second direction, the plurality of stacked films respectively including a variable resistance film, the stacked films arranged in the first direction and the second direction;
• a first insulating film being provided between one of the stacked films and another one of the stacked films in the first direction, the first insulating film extending at least in the third direction, the one of the stacked films and the another one of the stacked films being provided next to each other in the first direction;
• and
• a second insulating film in a cross sectional view perpendicular to the first direction, the second insulating film being provided between the one of the stacked films and the first insulating film in the first direction, between the first layer and the first insulating film in the third direction, and between the another one of the stacked films and the first insulating film in the first direction.

A semiconductor memory device, comprising:

• a first interconnect including tungsten extending in a first direction;
• a second interconnect including tungsten extending in the second direction crossing the first direction;
• a third interconnect including tungsten extending in the second direction, and the third interconnect being arranged apart from the second interconnect in the first interconnection;
• a first layer including nitride being provided on the first interconnect, and the first layer extending in the first direction;
• a first stacked film being provided between the first interconnect and the second interconnect in a third direction crossing to the first direction and the second direction, the first stacked film including a first variable resistance film;
• a second stacked film being provided between the first interconnect and the third interconnect in the third direction, the second stacked film including a second variable resistance film;
• a first insulating film being provide between the first stacked film and the second stacked film in the first direction, the first insulating film extending in the third direction;
• and
• a second insulating film including nitride, in a cross sectional view perpendicular to the first direction, the second insulating film being provided, between the first stacked film and the first insulating film in the first direction, between the first layer and the first insulating film in the third direction, and between the second stacked film and the first insulating film in the first direction.

A semiconductor memory device, comprising:

• a plurality of first interconnects extending in a first direction, the first interconnects arranged in a second direction crossing to the first direction;
• a plurality of second interconnects extending in the second direction, the second interconnects arranged in the first direction;
• a layer being provided on one of the first interconnects, the layer including metal material and the layer extending in the first direction;
• a plurality of stacked films respectively provided between the first interconnects and the second interconnects in a third direction crossing to the first direction and the second direction, the plurality of stacked films including a variable resistance film, the stacked films comprising films stacked in the third direction, the stacked films arranged in the first direction and the second direction;
• a first insulating film including a first part and a plurality of first protrusions, the first part provided between the first interconnects adjacent to each other in the second direction, the first part extending in the first direction, the first protrusions provided between the stacked films adjacent to each other in the second direction, the first protrusions extending from the first part to the second interconnects in the third direction, the first protrusions arranged in the first direction;
• and
• a second insulating film provided on a periphery of the stacked films arranged in the second direction, the second insulating film separated from a portion between the stacked films adjacent to each other, the second insulating film including a second part and a plurality of second protrusions the second part extending in the first direction, the second protrusions extending from the second part to the second interconnects in the third direction, the second protrusions arranged in the first direction, a length of the second protrusions in the third direction being less than a length of the stacked films between the first interconnects and the second interconnects in the third direction.