Method of integration of a magnetoresistive structure

A method of manufacturing an interconnect to a magnetoresistive structure, the method comprising:

• forming at least one via on a first surface of a first dielectric layer, the at least one via including sidewalls;
• depositing a first electrically conductive material in the at least one via to form a first layer of the first electrically conductive material on at least a portion of the sidewalls of the at least one via;
• after forming the first layer, depositing a second electrically conductive material to at least partially fill the at least one via and form a layer of the second electrically conductive material above a first surface of the first dielectric layer;
• polishing an exposed surface of the layer of the second electrically conductive material, wherein at least a portion of the layer of the second electrically conductive material above the first surface remains after the polishing;
• and
• forming a magnetoresistive structure above the layer of the second electrically conductive material after the polishing.

A method of manufacturing an interconnect to a magnetoresistive structure, the method comprising:

• forming a first layer of a first electrically conductive material on sidewalls of at least one via on a first surface of a first dielectric material;
• after forming the first layer, forming a second layer of a second electrically conductive material (a) over the first layer on the sidewalls of the at least one via, and (b) above the first surface of the first dielectric layer;
• polishing an exposed surface of the second layer using chemical mechanical polishing, wherein at least a portion of the second layer above the first surface remains after the polishing;
• and
• forming a magnetoresistive structure above the second layer after the polishing.