Method of manufacturing integrated circuit using encapsulation during an etch process

A method of fabricating a magnetoresistive bit from a magnetoresistive stack including (i) a first magnetic region, (ii) a dielectric region disposed over the first magnetic region, and (iii) a second magnetic region disposed over the dielectric region, the method comprising:

• using a first etch process to etch a first portion of the magnetoresistive stack and form one or more sidewalls, wherein at least a portion of the sidewalk includes redeposited material after the first etch process;
• using a second etch process to etch at least a portion of the redeposited material from the sidewalls after etching, the first portion;
• and
• etching through a second portion of the magnetoresistive stack using the first etch process after the second etch process.

A method of fabricating a magnetoresistive bit from a magnetoresistive stack including (i) a first magnetic region, (ii) a dielectric region disposed over the first magnetic region, and (iii) a second magnetic region disposed over the dielectric region, the method comprising:

• using a first etch process to etch a first portion of the magnetoresistive stack and form one or more sidewalls, wherein at least a portion of the sidewalls includes redeposited material after the first etch process;
• exposing the magnetoresistive stack to a chemical process to render at least a portion of the redeposited material on the sidewalls electrically nonconductive after etching the first portion;
• and
• etching through a second portion of the magnetoresistive stack after exposing the magnetoresistive stack to the chemical process.