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US 2019/0103553 A1Published application
Spin-orbit torque magnetic device
AssigneeUniversity-Industry Foundation (Uif), Yonsei University
InventorJongill Hong
Life of this patent
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Abstract
The present invention relates to a magnetic device including a spin-current pattern generating a spin current perpendicular to a main plane of the spin-current pattern by an in-plane current, and a free magnetic layer disposed in contact with the spin-current pattern and having a perpendicular magnetic anisotropy magnetically switchable by the spin current.
Claims20
A spin-orbit torque magnetic device comprising:
- a spin-current pattern generating a spin current perpendicular to a main plane of the spin-current pattern by an in-plane current;
- and
- a free magnetic layer disposed in contact with the spin-current pattern and having a perpendicular magnetic anisotropy magnetically switchable by the spin current,
- wherein the spin-current pattern comprising:
- a first non-magnetic conductive layer;
- a second non-magnetic conductive layer arranged oppositely to the first non-magnetic conductive layer;
- and
- a magnetic layer interposed between the first non-magnetic conductive layer and the second non-magnetic conductive layer, the magnetic layer having perpendicular magnetic anisotropy,
- wherein an atomic arrangement is aligned based on the first non-magnetic conductive layer,
- wherein the magnetic layer is subjected to tensile strain by the first non-magnetic conductive layer and the second non-magnetic conductive layer.
7 more elements
A spin-orbit torque magnetic device comprising:
- a spin-current pattern generating a spin current perpendicular to the arrangement plane by an in-plane current;
- and
- a free magnetic layer disposed in contact with the spin-current pattern and magnetically switchable by the spin current,
- wherein the free magnetic layer includes a magnetic layer and a non-magnetic conductive layer which have a multi-layer thin film structure disposed alternately to each other,
- wherein the magnetic layer has a perpendicular magnetic anisotropy and is magnetically switchable by the spin current, and the magnetic layer is subjected to a tensile strain by the non-magnetic conductive layer.
2 more elements
A magnetic stacked structure generating a spin current by spin-orbit coupling comprising:
- a first non-magnetic conductive layer;
- and
- a magnetic layer formed on the first non-magnetic conductive layer,
- wherein a reference bulk lattice constant of the magnetic layer is smaller than a lattice constant of the first non-magnetic conductive layer,
- wherein a tensile strain in a longitudinal direction parallel to a main surface of the magnetic layer which is provided as a ratio of the lattice constant of the magnetic layer with respect to a reference bulk lattice constant of the magnetic layer is 6 percent or more.
2 more elements
Dependencies are inferred from the claim text.