Isolated Hall Effect Element With Improved Electro-Magnetic Isolation

A method of forming a planar Hall effect element, comprising:

• providing a P-type substrate;
• forming a Hall plate region comprising:
• forming a first portion of an N-type layer disposed above the P-type region, the first portion of the N-type layer comprising:
• a top surface distal from the P-type substrate;
• and
• a continuous N-type outer boundary intersecting the top surface of the Hall plate region, wherein the method further comprises:
• forming an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.

A planar Hall effect element, comprising:

• a P-type substrate;
• means for forming a Hall plate region comprising:
• means for forming a first portion of an N-type layer disposed above the P-type substrate, the first portion of the N-type layer comprising:
• a top surface distal from the P-type substrate;
• and
• a continuous N-type outer boundary intersecting the top surface of the Hall plate region, wherein the planar Hall effect element further comprises:
• means for forming an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.