Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
AssigneeOSRAM OLED GmbH
InventorsFabian Kopp, Attila Molnar
Life of this patent
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Abstract
A method for producing an optoelectronic semiconductor chip is specified, wherein a method step A) involves providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type. Furthermore, the method comprises in a method step B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer. The method furthermore comprises in a method step C) applying a passivation layer to the mesa structure by means of vapour deposition or sputtering.
Claims18
A method for producing an optoelectronic semiconductor chip comprising the steps of:
- A) providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type
- A0) applying an electrically conductive layer over the semiconductor layer of the first type or the semiconductor layer of the second type,
- A1) applying a patterned mask on the semiconductor layer of the first type or on the semiconductor layer of the second type,
- B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer,
- B3) at least partially removing the electrically conductive layer in a region which directly adjoins the mesa structure and partially extends under the mask, by means of a wet-chemical etching process,
- C) application of a passivation layer to the mesa structure by means of vapor deposition or sputtering.
An optoelectronic semiconductor chip comprising:
- a semiconductor layer stack having a semiconductor layer of a first type and a semiconductor layer of a second type and an active layer which is arranged between the semiconductor layer of the first type and the semiconductor layer of the second type, wherein a mesa structure is formed in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer, the semiconductor layer stack has at an outer side a side surface with a structured surface and the semiconductor layer stack has a recess, wherein a side surface of the semiconductor layer stack faces the recess and has a smooth surface, and
- a passivation layer on the mesa structure, wherein the semiconductor chip comprises an electrically conductive layer over the semiconductor layer of the first type or over the semiconductor layer of the second type, wherein the passivation layer extends partially onto the electrically conductive layer.
The optoelectronic semiconductor chip according to claim 13, wherein the semiconductor chip comprises a further passivation layer which is arranged on the electrically conductive layer and on the passivation layer.
A method for producing an optoelectronic semiconductor chip comprising the steps of:
- A) providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type,
- A0) applying an electrically conductive layer over the semiconductor layer of the first type or the semiconductor layer of the second type,
- A1) applying a patterned mask on the semiconductor layer of the first type or on the semiconductor layer of the second type,
- B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer, whereby in forming the mesa structure, the electrically conductive layer on the semiconductor layer stack is at least partially removed, so that a gap between a mask and the semiconductor layer stack is generated,
- B3) at least partially removing the electrically conductive layer in a region which directly adjoins the mesa structure and partially extends under the mask, by means of a wet-chemical etching process,
- C) application of a passivation layer to the mesa structure by means of vapor deposition or sputtering.
Dependencies are inferred from the claim text.