US 2019/0103514 A1Published application

Light emitting element

AssigneeNichia Corporation

InventorKeiji EMURA

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Abstract

A light emitting element includes an n-pad electrode, a light-transmissive electrically conductive film on an upper surface of the p-side semiconductor layer, and a p-pad electrode on an upper surface of the light-transmissive electrically conductive film. When viewed from above, the semiconductor layered structure has a pentagonal outer peripheral shape having a first side, a second side adjacent to the first side at a right angle, a third side adjacent to the first side at a right angle, a fourth side adjacent to the second side at an obtuse angle, and a fifth side adjacent to the third side and the fourth side at an obtuse angle to the third side. The n-pad electrode is disposed near the first side, and the p-pad electrode is disposed closer to a first vertex where the fourth side and the fifth side meet, than the n-pad electrode is disposed to the first vertex.

Claims18

Dependent claims

A light emitting element comprising:

a semiconductor layered structure comprising an n-side semiconductor layer and a p-side semiconductor layer each made of a nitride semiconductor and at least partially overlapped with each other;
an n-pad electrode disposed on an upper surface of the n-side semiconductor layer in a different region from where the p-side semiconductor layer is disposed;
a light-transmissive electrically conductive film disposed on an upper surface of the p-side semiconductor layer;
and
a p-pad electrode disposed on an upper surface of the light-transmissive electrically conductive film,
wherein, when viewed in a plan view,
an outer peripheral shape of the semiconductor layered structure has a pentagonal shape having a first side, a second side adjacent to the first side at a right angle to the first side, a third side adjacent to the first side at a right angle to the first side, a fourth side adjacent to the second side at an obtuse angle to the second side, and a fifth side adjacent to the third side and the fourth side at an obtuse angle to the third side, the fourth side and the fifth side meet to form a first vertex,
the n-pad electrode is disposed closer to the first side than to the first vertex, and
the p-pad electrode is disposed closer to the first vertex than the n-pad electrode is disposed to the first vertex.

6 more elements

A light emitting element comprising:

a semiconductor layered structure comprising an n-side semiconductor layer and a p-side semiconductor layer each made of a nitride semiconductor and at least partially overlapped with each other;
an n-pad electrode disposed on an upper surface of the n-side semiconductor layer in a different region from where the p-side semiconductor layer is disposed;
a light-transmissive electrically conductive film disposed on an upper surface of the p-side semiconductor layer;
and
a p-pad electrode disposed on an upper surface of the light-transmissive electrically conductive film,
wherein, when viewed in a plan view,
an outer peripheral shape of the semiconductor layered structure has a hexagonal shape having a first side, a second side adjacent to the first side at a right angle to the first side, a third side adjacent to the first side at a right angle to the first side, a fourth side adjacent to the second side at an obtuse angle to the second side, a fifth side adjacent to the third side at an obtuse angle to the third side, and a sixth side adjacent to the third side and the fourth side at an obtuse angle to the fourth side and at an obtuse angle to the fifth side,
the n-pad electrode is disposed closer to the first side than to the sixth side, and
the p-pad electrode is disposed closer to the sixth side than the n-pad electrode is disposed to the sixth side.

6 more elements

Dependencies are inferred from the claim text.