Semiconductor device comprising schottky barrier diodes

A semiconductor device comprising:

• an N-type deep well region formed in a substrate;
• P-type well regions formed in the N-type deep well region;
• a silicide layer formed on the N-type deep well region, such that a Schottky barrier diode is formed between the silicide and the N-type deep well region;
• an N-type well region formed in the N-type deep well region and separated from the P-type well region by an insulating film;
• and
• a deep trench isolation region having a greater depth than a depth of the N-type deep well region and surrounding the N-type deep well region.

A semiconductor device comprising:

• an N-type deep well region and an N-type diffused well region contacting the N-type deep well region formed in a substrate, wherein a concentration of the N-type diffused well region is less than a concentration of the N-type deep well region;
• a first P-type well region formed in the N-type deep well region;
• a second P-type well region formed in the N-type diffused well region;
• an insulating film formed to be in contact with the first P-type well region;
• and
• a silicide formed to be in contact with the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well region.