Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a memory field effect transistor having a gate, a drain, and a source;
• and
• a logic transistor having a gate, a drain and a source, wherein:
• the gate of the memory field effect transistor comprises:
• a first insulating layer disposed over a substrate;
• a first ferroelectric material layer disposed over the first insulating layer;
• and
• a first gate electrode layer disposed over the first ferroelectric material layer, and
• the gate of the logic transistor comprises:
• a second insulating layer disposed over the substrate;
• a second ferroelectric material layer disposed over the second insulating layer;
• and
• a second gate electrode layer disposed over the second ferroelectric material layer, and
• wherein a thickness of the gate electrode layer of the memory transistor is different from a thickness of the gate electrode layer of the logic transistor.

A semiconductor device, comprising:

• a first field effect transistor having a gate, a drain, and a source;
• and
• a second field effect transistor having a gate, a drain and a source, wherein:
• the gates of the first and second transistors each comprise:
• an insulating layer disposed over a substrate;
• a ferroelectric material layer disposed over the insulating layer;
• and
• a gate electrode layer disposed over the ferroelectric material layer,
• wherein the insulating layer of the first field effect transistor is thinner than the insulating layer of the second field effect transistor and the gate electrode layer of the first field effect transistor is thicker than the gate electrode layer of the second field effect transistor.