Method for fabricating semiconductor device involving forming epitaxial material

A method for fabricating a semiconductor device, comprising:

• providing a substrate, having an exposed surface of a first semiconductor material on the substrate;
• forming a stress cap layer on the first semiconductor surface;
• inducing a stress on the exposed surface, wherein the stress is a tensile stress or a compressive stress;
• removing the stress cap layer;
• and
• growing an epitaxial material of a second semiconductor material on the exposed surface, wherein the second semiconductor material is different from the first semiconductor material.