Semiconductor Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ling Chan, Meng-Yueh Liu, Wei-Ken Lin
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Abstract
In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.
Claims21
A method comprising:
- forming a first fin on a first region of a substrate and a second fin on a second region of the substrate;
- forming a first gate stack on the first fin and a second gate stack on the second fin;
- forming a spacer layer over the first fin, the second fin, the first gate stack, and the second gate stack;
- forming a first mask over the spacer layer in the second region, the first mask covering the second fin;
- after the forming the first mask, implanting a first dopant having a first doping type in the spacer layer over the first fin;
- removing the first mask;
- performing a first anneal process to drive the first dopant into the first fin;
- and
- epitaxially growing a first source/drain region in the first fin.
A method comprising:
- forming a semiconductor fin protruding from a substrate;
- depositing a spacer layer over the semiconductor fin;
- after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps;
- removing the dopant layer;
- and
- performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.
-20. (canceled)
A method comprising:
- depositing isolation regions over a semiconductor substrate;
- forming a fin extending from between the isolation regions;
- forming a gate stack over a first region of the fin;
- depositing a spacer layer over the gate stack, the fin, and the isolation regions;
- after the depositing the spacer layer, implanting a first dopant in the spacer layer;
- annealing the spacer layer to drive the first dopant from the spacer layer into the gate stack, the isolation regions, and a second region of the fin, the second region of the fin being adjacent the first region of the fin;
- and
- growing a source/drain region in the second region of the fin.
Dependencies are inferred from the claim text.