US 2019/0103489 A1 · TRENCH POWER SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING THE SAME

Abstract

The present disclosure provides a trench power semiconductor component and a method of manufacturing the same. The trench gate structure of the trench power semiconductor component includes a shielding electrode, a gate electrode disposed above the shielding electrode, and an inter-electrode dielectric layer. Before the formation of the inter-electrode dielectric layer, the step of forming the trench gate structure includes: forming a laminated structure covering the inner wall surface of the cell trench, in which the laminated structure includes a semiconductor material layer and an initial inner dielectric layer covering the semiconductor material layer; forming a heavily-doped semiconductor material in the lower part of the cell trench; and removing a portion of the initial inner dielectric layer located at an upper part of the cell trench to expose an upper half portion of the semiconductor material layer and a top portion of the heavily doped semiconductor material.

Claims16

Dependent claims

A trench power semiconductor component, comprising:

a substrate;
an epitaxial layer disposed on the substrate, the epitaxial layer having at least one cell trench formed therein;
and
a trench gate structure disposed in the cell trench, wherein the trench gate structure includes:
an outer insulating layer covering an inner wall surface of the cell trench;
a shielding electrode located in a lower part of the cell trench;
a gate electrode disposed above the shielding electrode and insulated from the shielding electrode;
and
a laminated shielding layer covering a lower inner surface of the outer insulating layer, wherein the laminated shielding layer at least includes a semiconductor layer that is spaced apart from the shielding layer and interposed between the lower inner surface and the shielding electrode.

6 more elements

A method of manufacturing a trench power semiconductor component, comprising:

forming an epitaxial layer on a substrate;
forming a cell trench in the epitaxial layer;
and
forming a trench gate structure in the cell trench, the trench gate structure including a shielding electrode, a gate electrode disposed above the shielding electrode, and an inter-electrode dielectric layer interposed between the shielding electrode and the gate electrode;
wherein before the inter-electrode dielectric layer is formed, the step of forming the trench gate structure in the cell trench further includes:
forming a laminated structure covering an inner wall surface of the cell trench, wherein the laminated structure at least includes a semiconductor material layer and an initial inner dielectric layer covering the semiconductor material layer;
forming a heavily-doped semiconductor material in a lower part of the cell trench;
and
removing a part of the initial inner dielectric layer located in an upper part of the cell trench to expose an upper half portion of the semiconductor material layer and a top portion of the heavily doped semiconductor material.

6 more elements

Dependencies are inferred from the claim text.

Trench power semiconductor component and method of manufacturing the same

Life of this patent

Trench power semiconductor component and method of manufacturing the same

Life of this patent

Abstract

Claims16