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US 2019/0103487 A1Published application
FinFET Device and Method of Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ling Chan, Yen-Chun Lin
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Abstract
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer, removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region, and epitaxially growing a source/drain region in the first recess.
Claims20
A method comprising:
- forming a fin over a substrate;
- forming a dummy gate structure over the fin;
- forming a first spacer over the dummy gate structure;
- implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer;
- removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region;
- and
- epitaxially growing a source/drain region in the first recess.
4 more elements
A method comprising:
- patterning a substrate to form a strip, the strip comprising a first semiconductor material;
- forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above a top surface of the isolation region;
- forming a dummy gate structure along sidewalls and along a first top surface of the upper portion of the strip;
- performing a first doping process to form a first doped region of the strip, the first doped region extending from a second top surface of the upper portion of the strip to below a top surface of the isolation region, the second top surface of the upper portion of the strip being adjacent the dummy gate structure;
- performing a first etching process on the first doped region of the upper portion of the strip, wherein the first etching process selectively removes the first doped region to form a first recess;
- and
- epitaxially growing a source/drain region in the first recess.
4 more elements
A semiconductor device comprising:
- a first semiconductor fin over a substrate;
- a gate stack overlying the first semiconductor fin;
- a spacer on a sidewall of the gate stack;
- and
- an epitaxial region within the first semiconductor fin and undercutting the spacer, the epitaxial region having a surface proximity measurement to tip proximity measurement difference of less than about 1%.
2 more elements
Dependencies are inferred from the claim text.