Device and method of dielectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Yun PENG, Keng-Chu LIN
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Abstract
A method includes etching a semiconductor substrate to form a trench extending from a top surface of the semiconductor substrate into the semiconductor substrate. A first liner layer is formed on sidewalls and a bottom of the trench. The trench is filled with a dielectric material after depositing the first liner layer. The dielectric material and the first liner layer include substantially the same metal-contained ternary dielectric material. Excess portions of the dielectric material and the first liner layer over the top surface of the semiconductor substrate are removed.
Claims20
A method comprising:
- etching a semiconductor substrate to form a trench extending from a top surface of the semiconductor substrate into the semiconductor substrate;
- depositing a first liner layer on sidewalls and a bottom of the trench;
- filling the trench with a dielectric material after depositing the first liner layer, wherein the dielectric material and the first liner layer comprise substantially the same metal-contained ternary dielectric material;
- and
- removing excess portions of the dielectric material and the first liner layer over the top surface of the semiconductor substrate.
A method comprising:
- forming first and second gate stacks over a semiconductor substrate;
- depositing a metal-contained ternary dielectric layer conformally over the first and second gate stacks and the semiconductor substrate;
- filling a space between the first and second gate stacks with a metal-contained ternary dielectric material;
- and
- removing excess portions of the metal-contained ternary dielectric layer and the metal-contained ternary dielectric material over top surfaces of the first and second gate stacks.
A device comprising:
- a semiconductor substrate;
- and
- a shallow trench isolation (STI) structure in the semiconductor substrate, the STI structure comprising:
- an isolation material in the semiconductor substrate;
- and
- a first liner layer wrapping around the isolation material, wherein the isolation material and the first liner layer comprise substantially the same metal-contained ternary oxide material.
Dependencies are inferred from the claim text.