Bidirectional power mosfet structure with a cathode short structure
AssigneeNXP USA, Inc.
InventorsTanuj Saxena, Vishnu K. Khemka, Raghu Gupta, Moaniss Zitouni, Ganming Qin
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Abstract
A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated control gate is located over the semiconductor body between the source and drain and configured to control a conductive channel extending between the source and drain. First and second doped regions such as highly-doped regions are adjacent to the source. The first or second doped region may be a cathode short region electrically coupled to the source. The cathode short region may be used in a bidirectional power MOSFET.
Claims30
A metal oxide silicon field effect transistor (MOSFET) device comprising:
- a semiconductor substrate (101) having first and second opposing surfaces (102, 103);
- a first region (118) in the semiconductor substrate adjacent to the first surface (102), the first surface adjacent to a drain contact (104);
- a second region (113) in the semiconductor substrate adjacent to the second surface (103), the second surface adjacent to a source contact (105), the second region including a source-located cathode short region (116) the source-located cathode short region (116) being isolated from an insulated gate (117), the source-located cathode short region being of a same conductivity type as the semiconductor substrate;
- a doped region (114) of a different conductivity type as the semiconductor substrate:
- a third region (112) in the semiconductor substrate between the first region and the second region, the third region adjacent to a body contact (107);
- and
- an insulated gate (117) adjacent to at least the first region and the third region.
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A field effect device comprising:
- a semiconductor body (101) having first and second opposing surfaces (102, 103);
- a source (105) coupled to the semiconductor body proximate the second surface;
- a drain (104) coupled to the semiconductor body proximate the first surface and separated from the source;
- an insulated control gate (117) located over the semiconductor body between the source and drain and configured to control a conductive channel extending between the source and drain;
- a first doped region (116) of a same conductivity type as the semiconductor body adjacent to the source, the first doped region being isolated from the insulated control gate;
- a second doped region (114) of a different conductivity type as the semiconductor body, the second doped region adjacent to the first doped region and adjacent to the source;
- and
- one or more electrical connections (104, 105) coupling the source and the drain to the semiconductor body.
Dependencies are inferred from the claim text.