Semiconductor Device Having an Active Trench and a Body Trench

A semiconductor device, comprising:

• a semiconductor substrate having a first main surface;
• a drift region of a first conductivity type formed in the semiconductor substrate;
• a body region of a second conductivity type opposite the first conductivity type formed in the semiconductor substrate above the drift region;
• and
• a transistor cell comprising:
• an active gate trench extending from the first main surface and into the body region, the active gate trench including a first electrode coupled to a gate potential;
• a source region of the first conductivity type formed in the body region adjacent to the gate trench and coupled to a source potential;
• a first body trench extending from the first main surface and into the body region, the first body trench including a second electrode coupled to the source potential;
• and
• an inactive gate trench extending from the first main surface and into the body region, the inactive gate trench including a third electrode coupled to the gate potential,
• wherein a conductive channel of the transistor cell is present along the active gate trench in case of the gate potential being at an on-voltage of the semiconductor device,
• wherein no conductive channel of the transistor cell is present along the inactive gate trench in case of the gate potential being at the on-voltage.