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US 2019/0103477 A1Published application
FinFet Device and Method of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Ting Ko, Bo-Cyuan Lu, Jr-Hung Li, Chi On Chui
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Abstract
A FinFET device and a method of forming the same are provided. A method includes forming a fin extending above an isolation region. A sacrificial gate is formed over the fin. A first dielectric material is selectively deposited on sidewalls of the sacrificial gate to form spacers on the sidewalls of the sacrificial gate. The fin is patterned using the sacrificial gate and the spacers as a combined mask to form a recess in the fin. An epitaxial source/drain region is formed in the recess.
Claims20
A method comprising:
- forming a fin extending above an isolation region;
- forming a sacrificial gate over the fin;
- selectively depositing a first dielectric material on sidewalls of the sacrificial gate to form spacers on the sidewalls of the sacrificial gate, wherein the first dielectric material is not deposited over a top surface of the sacrificial gate;
- patterning the fin using the sacrificial gate and the spacers as a combined mask to form a recess in the fin;
- and
- forming an epitaxial source/drain region in the recess.
3 more elements
A method comprising:
- recessing an isolation region to expose sidewalls of a semiconductor fin;
- forming a gate electrode layer over the semiconductor fin;
- forming a patterned mask over the gate electrode layer;
- removing portions of the gate electrode layer exposed by the patterned mask to form a sacrificial gate over the semiconductor fin;
- performing a fluorination process on the patterned mask to form a fluorinated patterned mask;
- selectively depositing a first dielectric material on sidewalls of the sacrificial gate to form spacers on the sidewalls of the sacrificial gate;
- etching the semiconductor fin using the fluorinated patterned mask, the sacrificial gate and the spacers as a combined mask to form a recess in the semiconductor fin;
- and
- depositing a semiconductor material in the recess.
6 more elements
A method comprising:
- etching an isolation region to expose sidewalls of a semiconductor fin;
- forming a first oxide material on the sidewall and a top surface of the semiconductor fin;
- forming a conductive material over the first oxide material;
- forming a second oxide material over the conductive material;
- etching the second oxide material to form a patterned second oxide material;
- etching the conductive material using the patterned second oxide material as a mask to form a sacrificial gate over the semiconductor fin;
- forming a first dielectric material on sidewalls and a top surface of the patterned second oxide material, and over exposed portions of the first oxide material;
- performing a fluorination process on the patterned second oxide material and the exposed portions of the first oxide material, the fluorination process forming a fluorinated patterned second oxide material;
- removing the first dielectric material;
- selectively depositing a second dielectric material on sidewalls of the sacrificial gate;
- etching the semiconductor fin using the fluorinated patterned second oxide material, the sacrificial gate and the second dielectric material as a combined mask to form a recess in the semiconductor fin;
- and
- epitaxially growing a semiconductor material in the recess.
10 more elements
Dependencies are inferred from the claim text.