Sidewall engineering for enhanced device performance in advanced devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsEng Huat TOH, Shyue Seng TAN, Kiok Boone Elgin QUEK
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Abstract
A method of sidewall engineering with negative capacitance materials is disclosed. For example, the negative capacitance material is a ferroelectric material. The method includes providing a dielectric liner on the sidewall of the gate and providing a negative capacitance liner or spacer over the dielectric liner. In one embodiment, the dielectric liner is an oxide liner and the negative capacitance liner or spacer is a ferroelectric liner or spacer. The engineered negative capacitance liner or spacer enhances the gate-to-S/D region and gate-to-contact coupling and hence the device ION-IOFF performance is improved.
Claims21
1-11. (canceled)
A method of forming a device comprising:
- forming a substrate with a device region;
- forming a gate and source/drain (S/D) regions in the device region;
- and
- forming one or more spacer units on sidewalls of the gate, wherein forming the one or more spacer units comprises
- forming a first dielectric spacer liner deposited on the sidewalls of the gate, and
- forming a second dielectric spacer liner or layer on the first dielectric spacer liner, wherein the second dielectric spacer liner or layer comprises a second negative capacitance spacer liner or layer coupled with the S/D regions, the negative capacitance spacer liner or layer enhances gate-to-S/D region coupling between the gate and the S/D regions.
A method of forming a device comprising:
- forming a substrate with a device region;
- forming a gate and source/drain (S/D) regions in the device region;
- and
- forming a composite spacer on the gate sidewalls, wherein forming the composite spacer comprises forming a negative capacitance spacer liner or layer coupled with the S/D regions, the negative capacitance spacer liner or layer enhances gate-to-S/D region coupling between the gate and the S/D regions.
Dependencies are inferred from the claim text.