Ldmos with high-k drain sti dielectric
AssigneeTexas Instruments Incorporated
InventorsUmamaheswari Aghoram, Pushpa Mahalingam, Alexei Sadovnikov, Eugene C. Davis
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Abstract
A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure is formed between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon dioxide.
Claims19
1-14. (canceled)
A method of fabricating a laterally diffused metal oxide silicon (LDMOS) transistor in a first region of a wafer, the method comprising:
- providing a wafer for which locations for a source region, a drain contact region and a gate region have been defined and having an extended drain region formed in the wafer;
- forming a first shallow trench isolation (STI) structure in the first region and filling the first STI structure with a first dielectric material;
- and
- forming a drain STI structure in the extended drain region of the LDMOS transistor and filling the drain STI structure with a second dielectric material that is different from the first dielectric material and that comprises a high-k dielectric.
A method of fabricating an integrated circuit, comprising:
- forming, within a semiconductor substrate having a first conductivity type, a well region having a second different conductivity type;
- forming within the well region a first isolation structure filled with a first dielectric material having a first dielectric constant;
- and
- forming within the well region a second isolation structure filled with a second dielectric material having a second different dielectric constant;
- and
- forming a gate electrode over the second isolation structure.
Dependencies are inferred from the claim text.