US 2019/0103469 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract

A semiconductor device having a composite barrier structure over a transistor and a method for manufacturing the same is disclosed. The method includes a series of steps including: forming a transistor having source/drain regions within a fin structure and adjacent to a gate structure across over the fin structure; forming first source/drain contacts right above and electrically connected to the source/drain regions; depositing a composite barrier structure over the transistor and the first source/drain contacts; and forming second source/drain contacts right above and electrically connected to the first source/drain contacts. The method further includes depositing a second etch-stop layer before depositing the composite barrier structure and forming second source/drain contacts right above and electrically connected to the first source/drain contacts. The method also includes forming contacts over and electrically connected to the second source/drain contacts.

Claims20

Dependent claims

A semiconductor device, comprising:

a transistor, comprising:
a first source/drain region;
a second source/drain region;
and
a gate structure between the first source/drain region and the second source/drain region;
a composite barrier structure comprising multiple etch-stop layers, wherein each of the multiple etch-stop layers at least partially covers the transistor;
and
a first source/drain contact laterally adjacent the composite barrier structure and electrically connected to the first source/drain region.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/205,395Filed 30 Nov 2018

Priority

16 Dec 2015

Published

4 Apr 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 30/6219
Fin field-effect transistors [FinFET]: characterised by the source or drain electrodes
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/6211
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
H10D 64/667
Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes: the conductor comprising a layer of…

Family

Application62/268,434Us provisional application · filed 16 Dec 2015

Application15/053,499Division · filed 25 Feb 2016

Application15/791,362Continuation · filed 23 Oct 2017

Application16/205,395Continuation

Application15/791,362Division

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