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US 2019/0103465 A1Published application
Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device
AssigneeFlosfia Inc.
InventorsTokiyoshi MATSUDA, Takashi SHINOHE, Shingo YAGYU, Takuto IGAWA
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Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.
Claims20
A layered structure comprising:
- a first semiconductor layer comprising as a major component an ε-phase oxide semiconductor crystal;
- and
- a second semiconductor layer positioned on the first semiconductor layer and comprising as a major component an oxide semiconductor crystal with a tetragonal crystal structure.
Dependencies are inferred from the claim text.