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US 2019/0103464 A1Published application
Semiconductor device
AssigneeToyoda Gosei Co., Ltd.
InventorsTakatomi Izumi, Junya Nishii, Yuhei Ikemoto
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Abstract
A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.
Claims6
A semiconductor device comprising:
- a nitride semiconductor layer;
- an oxide insulating film configured to form to contact the nitride semiconductor layer;
- and
- a gate electrode configured to form to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.
1 more element
Dependencies are inferred from the claim text.