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US 2019/0103463 A1Published application
Semiconductor device and method of manufacturing the same
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorKOUICHI SAITOU
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Abstract
A semiconductor device includes a bulk substrate, and an epitaxial layer formed on a surface of the bulk substrate. A part of the surface of the bulk substrate is an alignment region including an alignment pattern defined by at least one recess or one protrusion. An ion-injected layer is formed in at least a part of the alignment region.
Claims9
A semiconductor device comprising:
- a bulk substrate;
- and
- an epitaxial layer formed on a surface of the bulk substrate,
- wherein:
- a part of the surface of the bulk substrate is an alignment region including an alignment pattern defined by at least one recess or one protrusion, and
- an ion-injected layer is formed in at least a part of the alignment region.
3 more elements
A semiconductor device manufacturing method comprising:
- a first step of preparing a bulk substrate;
- a second step of forming a resist film on a surface of the bulk substrate;
- a third step of forming a mask layer by removing a part of the resist film through photolithography;
- a fourth step of forming an alignment region including an alignment pattern on the surface of the bulk substrate by etching the bulk substrate by using the mask layer;
- a fifth step of removing the mask layer;
- and
- a sixth step of performing ion injection in at least a part of the alignment region.
4 more elements
Dependencies are inferred from the claim text.