Metal-insulator-semiconductor-insulator-metal (misim) device, method of operation, and memory device including the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsJenn-Gwo HWU, Hao-Hsiung LIN, Chang-Feng YANG, Samuel C. PAN
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Abstract
A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
Claims20
A metal-insulator-semiconductor-insulator-metal (MISIM) device, comprising:
- a semiconductor layer;
- an insulating layer disposed over an upper surface of the semiconductor layer;
- a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface;
- and
- first and second electrodes disposed over the insulating layer and spaced-apart from each other.
A method for operating a metal-insulator-semiconductor-insulator-metal (MISIM) device, wherein the MISIM device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other, the method comprising:
- increasing a voltage difference between the first electrode and the second electrode from a first value to a second value or decreasing the voltage difference between the first electrode and the second electrode from the second value to the first value, while maintaining connection of the second electrode and the ground and maintaining a bias between the first electrode and the back electrode.
A method for operating a metal-insulator-semiconductor-insulator-metal (MISIM) device, wherein the MISIM device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other, the method comprising:
- increasing a voltage difference between the first electrode and the back electrode from a first value to a second value or decreasing the voltage difference between the first electrode and the back electrode from the second value to the first value, while maintaining connection of the back electrode and the ground and maintaining a bias between the first electrode and the second electrode.
Dependencies are inferred from the claim text.