US 2019/0103440 A1 · SEMICONDUCTOR STORAGE DEVICE

Abstract

A semiconductor storage device includes a global bit line extending in a horizontal direction, a select transistor provided on the global bit line and including a first terminal connected to the global bit line, a bit line provided on the select transistor, extending in a vertical direction, and connected to a second terminal of the select transistor, a plurality of word lines and insulating layers that are stacked alternately in a vertical direction, a first variable resistance layer between one of the plurality of word lines and a first side surface of the bit line, a plurality of dummy word lines and insulating layers that are stacked alternately in the vertical direction and disposed at the same level as the plurality of word lines, and a second variable resistance layer between the plurality of dummy word lines and a second side surface of the bit line.

Claims20

Dependent claims

A semiconductor storage device comprising:

a global bit line that extends in a first horizontal direction;
a first select transistor provided on the global bit line and including a first terminal connected to the global bit line;
a first bit line provided on the first select transistor, extending in a vertical direction, and connected to a second terminal of the first select transistor;
a plurality of word lines and insulating layers that are stacked alternately in a vertical direction;
a first variable resistance layer between one of the plurality of word lines and a first side surface of the first bit line;
a plurality of first dummy word lines and insulating layers that are stacked alternately in the vertical direction and disposed at the same level as the plurality of word lines;
and
a second variable resistance layer provided between one of the plurality of first dummy word lines and a second side surface opposite to the first side surface of the first bit line.

5 more elements

A semiconductor storage device comprising:

a global bit line that extends in a first horizontal direction;
a first select transistor provided on the global bit line and including a first terminal connected to the global bit line;
a first bit line provided on the first select transistor, extending in a vertical direction, and connected to a second terminal of the first select transistor;
a plurality of word lines and insulating layers that are stacked alternately in a vertical direction;
a first variable resistance layer between one of the plurality of word lines and a first side surface of the first bit line;
a plurality of first dummy word lines and insulating layers that are stacked alternately in the vertical direction and disposed at the same level as the plurality of word lines;
and
a second variable resistance layer between one of the plurality of first dummy word lines and a second side surface opposite to the first side surface of the first bit line,
wherein one of the plurality of dummy word lines is electrically connected to a ground voltage.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor storage device

Life of this patent

Semiconductor storage device

Life of this patent

Abstract

Claims20