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US 2019/0103436 A1Published application
Photo detecting apparatus and method of manufacturing the same
AssigneeLG Display Co., Ltd.
InventorsSungbong HA, DaeKyu KIM
Life of this patent
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Abstract
Provided is a photo detecting apparatus. The photo detecting apparatus includes a thin film transistor array on a first surface of a substrate having a specific light transmissivity and a photo diode structure between the first surface and the thin film transistor array. The photo diode structure is implemented to receive and process an electromagnetic radiation through a second surface of the substrate.
Claims30
A photo detecting apparatus, comprising:
- a thin film transistor array on a first surface of a substrate having a specific light transmissivity;
- and
- a photo diode structure between the first surface and the thin film transistor array, the photo diode structure being implemented to receive and process an electromagnetic radiation through a second surface of the substrate.
A photo reaction element comprising:
- a specific structure in which a specific switch is formed thereon after forming a specific detector on a specific substrate, a fill factor of the specific structure being improved as compared with a normal structure in which a normal detector is formed on a normal switch after forming the normal switch on a normal substrate.
An X-ray detector, comprising:
- a substrate;
- a thin film transistor on a first surface of the substrate;
- a photo diode between the thin film transistor and the substrate;
- and
- a phosphor on a second surface of the substrate.
2 more elements
A manufacturing method of a substrate for a photo detector, the method comprising:
- a first process of forming a photo diode on a first surface of a substrate;
- and
- a second process of forming a thin film transistor on the first surface of the substrate after the first process.
Dependencies are inferred from the claim text.