Wide spectrum optical sensor

An optical sensor comprising:

• a semiconductor substrate;
• a first gate formed on the semiconductor substrate;
• a wafer supported by the semiconductor substrate;
• a first light absorption region formed in the wafer, wherein the first light absorption region is configured to:
• absorb first photons at a first wavelength range;
• and
• generate first photo-carriers from the absorbed first photons;
• a bonding layer between the semiconductor substrate and the wafer, wherein a part of the bonding layer is between the first gate and the wafer;
• a second light absorption region formed in the semiconductor substrate, wherein the second light absorption region is configured to:
• absorb second photons at a second wavelength range;
• and
• generate second photo-carriers from the absorbed photons;
• and
• a first carrier-collection region formed in the semiconductor substrate, wherein the first carrier-collection region is configured to collect first carriers.

An optical sensor comprising:

• a semiconductor substrate;
• a first gate formed on the semiconductor substrate;
• a wafer supported by the semiconductor substrate;
• a first light absorption region formed in the wafer, wherein the first light absorption region is configured to:
• absorb first photons at a first wavelength range;
• and
• generate first photo-carriers from the absorbed first photons;
• a bonding layer between the semiconductor substrate and the wafer, wherein a part of the bonding layer is between the first gate and the wafer;
• and
• a second light absorption region formed in the semiconductor substrate, wherein the second light absorption region is configured to:
• absorb second photons at a second wavelength range;
• and
• generate second photo-carriers from the absorbed second photons.

An optical sensor comprising:

• a semiconductor substrate;
• a first gate formed on the semiconductor substrate;
• a wafer supported by the semiconductor substrate;
• a first light absorption region formed in the wafer, wherein the first light absorption region is configured to:
• absorb photons at a first wavelength range;
• and
• generate photo-carriers from the absorbed photons;
• and
• a bonding layer between the semiconductor substrate and the wafer, wherein a part of the bonding layer is between the first gate and the wafer.