Solid-state imaging device, method of manufacturing the same, and electronic apparatus
AssigneeSony Corporation
InventorKenichi MURATA
Life of this patent
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Abstract
The present technology relates to a solid-state imaging device that can further reduce the influence the film stress generated in an upper electrode has on a photoelectric conversion film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and two or more light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate. The present technology can be applied to solid-state imaging devices, electronic apparatuses, and the like, for example.
Claims10
A solid-state imaging device comprising:
- a photoelectric conversion film formed on an upper side of a semiconductor substrate;
- and
- at least two light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate.
A method of manufacturing a solid-state imaging device, comprising:
- forming a photoelectric conversion film on an upper side of a semiconductor substrate;
- and
- forming at least two light shielding films at positions higher than the photoelectric conversion film with respect to the semiconductor substrate.
An electronic apparatus comprising a solid-state imaging device including:
- a photoelectric conversion film formed on an upper side of a semiconductor substrate;
- and
- at least two light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate.
Dependencies are inferred from the claim text.