Mechanisms for forming image-sensor device with deep-trench isolation structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJeng-Shyan LIN, Dun-Nian YAUNG, Jen-Cheng LIU, Feng-Chi HUNG
Life of this patent
Estimating the term…
Abstract
An image-sensor device is provided. The image-sensor device includes a substrate having a front side and a back side. The image-sensor device also includes a radiation-sensing region operable to detect incident radiation that enters the substrate through the back side. The image-sensor device further includes a deep-trench isolation structure extending from the back side towards the front side. The deep-trench isolation structure includes a dielectric layer, and the dielectric layer contains hafnium or aluminum.
Claims20
An image-sensor device, comprising:
- a substrate having a front side and a back side;
- a radiation-sensing region operable to detect incident radiation that enters the substrate through the back side;
- and
- a deep-trench isolation structure extending from the back side towards the front side, wherein the deep-trench isolation structure comprises a dielectric layer, and the dielectric layer contains hafnium or aluminum.
An image-sensor device, comprising:
- a substrate having a front side and a back side;
- a radiation-sensing region operable to detect incident radiation that enters the substrate through the back side;
- a doped isolation region formed in the substrate and adjacent to the radiation-sensing region;
- and
- a deep-trench isolation structure extending from the back side towards the front side of the substrate, wherein the deep-trench isolation structure is in direct contact with the doped isolation region.
An image-sensor device, comprising:
- a substrate having a front side and a back side;
- a radiation-sensing region operable to detect incident radiation that enters the substrate through the back side;
- a deep-trench isolation structure in the substrate, wherein the deep-trench isolation structure is separated from the radiation-sensing region by a portion of the substrate, the deep-trench isolation structure comprises a dielectric layer, and the dielectric layer contains hafnium or aluminum.
Dependencies are inferred from the claim text.