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US 2019/0103411 A1Published application
Flash memory devices incorporating a polydielectric layer
AssigneeIntel Corporation
InventorsHaitao Liu, Guangyu Huang, Krishna K. Parat, Shrotri B. Kunal, Srikant Jayanti
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Abstract
Flash memory technology is disclosed. In one example, a flash memory cell can include a charge storage structure, a control gate laterally separated from the charge storage structure, and at least four dielectric layers disposed between the control gate and the charge storage structure. Associated systems and methods are also disclosed.
Claims27
A flash memory device, comprising:
- a plurality of insulative layers vertically spaced apart from one another;
- a vertically oriented conductive channel extending through the plurality of insulative layers;
- a charge storage structure disposed between individual adjacent insulative layers;
- a control gate laterally separated from the charge storage structure such that the charge storage structure is between the control gate and the conductive channel;
- and
- at least four dielectric layers disposed between the control gate and the charge storage structure.
3 more elements
A method for making a flash memory device, comprising:
- forming at least four dielectric layers between adjacent, vertically spaced apart insulative layers, wherein a first layer of the at least four dielectric layers is adjacent to a control gate between the insulative layers;
- and
- forming a charge storage structure adjacent to a second layer of the at least four dielectric layers, such that the charge storage structure is laterally separated from the control gate and the at least four dielectric layers are between the control gate and the charge storage structure.
Dependencies are inferred from the claim text.