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US 2019/0103408 A1Published application
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsWANXUN HE, Su Xing
Life of this patent
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region and the substrate comprises a semiconductor layer on top of an insulating layer; forming a first front gate on the first region of the substrate and a second front gate on the second region of the substrate; removing part of the insulating layer under the first front gate; forming a first back gate on the insulating layer under the first front gate; and forming a second back gate under the second front gate.
Claims10
A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region, wherein the substrate comprises a semiconductor layer on top of an insulating layer;
- forming a first front gate on the first region of the substrate and a second front gate on the second region of the substrate;
- removing part of the insulating layer under the first front gate;
- forming a first back gate on the insulating layer under the first front gate;
- and
- forming a second back gate under the second front gate.
3 more elements
Dependencies are inferred from the claim text.