Memory element and manufacturing method of memory element
AssigneeSony Corporation
InventorsTakuya ITO, Koichiro SAGA
Life of this patent
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Abstract
To further improve reliability as an element for the memory element. Provided is a memory element including: a plurality of magnetoresistive elements having an MTJ structure that are arrayed on a substrate. There is a region in which magnetism is neutralized in a region of a magnetic material layer that functions as a storage layer in the magnetoresistive element other than a region that functions as the magnetoresistive element, and the region in which magnetism is neutralized includes an alloy containing a first element constituting the magnetic material layer and a second element having an fcc structure when forming an alloy with the first element.
Claims13
A memory element comprising:
- a plurality of magnetoresistive elements having an MTJ structure that are arrayed on a substrate,
- wherein there is a region in which magnetism is neutralized in a region of a magnetic material layer that functions as a storage layer in the magnetoresistive element other than a region that functions as the magnetoresistive element, and
- the region in which magnetism is neutralized includes an alloy containing a first element constituting the magnetic material layer and a second element having an fcc structure when forming an alloy with the first element.
A manufacturing method of a memory element, comprising:
- a step of forming a region in which magnetism is neutralized in a region of a magnetic material layer that functions as a storage layer in a magnetoresistive element having an MTJ structure other than a region that functions as the magnetoresistive element,
- wherein the step of forming the region in which magnetism is neutralized includes
- a step of depositing a film including a second element that has an fcc structure when forming an alloy with a first element that constitutes the magnetic material layer in a predetermined region on the magnetic material layer, and
- a step of forming the region in which magnetism is neutralized in the predetermined region by performing heat treatment to cause the first element and the second element to mutually diffuse, and forming an alloy containing the first element and the second element in the predetermined region.
Dependencies are inferred from the claim text.