Back to results
US 2019/0103403 A1Published application
Semiconductor Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chieh Chang, Cheng-Han Lee, Yi-Min Huang
Life of this patent
Estimating the term…
Abstract
A process for manufacturing a semiconductor device and the resulting structure are presented. In an embodiment a source/drain region is grown. Once grown, the source/drain region is reshaped in order to remove facets. The reshaping may be performed using an etching process whereby a lateral etch rate of the source/drain region is larger than a vertical etch rate of the source/drain region.
Claims20
A semiconductor device comprising:
- a gate stack over a first semiconductor fin over a substrate;
- a spacer adjacent to the gate stack;
- a source/drain region adjacent to the spacer, the source/drain region comprising:
- a first surface facing away from the substrate;
- and
- a second surface, wherein the second surface is substantially vertical.
3 more elements
A structure comprising:
- a raised portion of a substrate;
- a first fin over the raised portion of the substrate;
- a second fin over the substrate, the second fin being adjacent the first fin;
- an isolation region surrounding the first fin and the second fin;
- a gate stack along sidewalls and over upper surfaces of the first fin and the second fin;
- and
- a source/drain region on the first fin and the second fin adjacent the gate stack, the source/drain region comprising a top surface and sidewalls, wherein the sidewalls of the source/drain region are substantially perpendicular with a major surface of the substrate.
4 more elements
A device comprising:
- a plurality of fins protruding from a substrate;
- an isolation region surrounding the plurality of fins;
- a first gate stack over the plurality of fins;
- and
- an epitaxial source/drain region adjacent the first gate stack and extending over the plurality of fins, the epitaxial source/drain region comprising a top surface and sidewalls, wherein the sidewalls of the epitaxial source/drain region comprise non-faceted surfaces and wherein the top surface of the epitaxial source/drain region is substantially perpendicular with the non-faceted surfaces.
2 more elements
Dependencies are inferred from the claim text.