Semiconductor device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorShingo TSUCHIMOCHI
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AssigneeToyota Jidosha Kabushiki Kaisha
InventorShingo TSUCHIMOCHI
Estimating the term…
A semiconductor device includes: an insulating substrate including an insulating layer of which a first metal layer and a second metal layer are provided on both surfaces; a semiconductor element provided on the first metal layer; and an external connection terminal bonded to the first metal layer, the external connection terminal being electrically insulated from the second metal layer, wherein: the first metal layer includes a main portion being in contact with the insulating layer, the semiconductor element being provided in the main portion, and a protruding portion protruding from the main portion, the external connection terminal being bonded to the protruding portion; and at least a part of the protruding portion is provided to protrude from an outer peripheral edge of the insulating layer in a plan view of the insulating substrate.
A semiconductor device comprising:
Dependencies are inferred from the claim text.