US 2019/0103396 A1 · SINGLE-STACK BIPOLAR-BASED ESD PROTECTION DEVICE

Abstract

ESD protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a base well region having a first conductivity type and composed of first and second regions, the first base well region having a higher doped concentration and the second base well region situated between the first base well region and a collector region having a second conductivity type opposite the first conductivity type, an emitter region within the first base well region having the second conductivity type, first and second floating regions within the first base well region, the first floating region having the second conductivity type between the emitter region and the seocond floating region, the second floating region having the first conductivity type between the first floating region and the second base well region. The floating regions within the first base well region are abutting and electrically connected.

Claims19

Dependent claims

A semiconductor device, comprising:

a first region of semiconductor material having a first conductivity type;
a second region of semiconductor material partially overlapping the first region, the second region having a first conductivity type;
a third region of semiconductor material within the first region, the third region having a second conductivity type opposite the first conductivity type;
a fourth region of semiconductor material having the second conductivity type;
a fifth region of semiconductor material having the first conductivity type;
a sixth region of semiconductor material within the first region, the sixth region having the second conductivity type;
and
a seventh region of semiconductor material within the first region, the seventh region having the first conductivity type;
wherein:
a portion of the first region is disposed between the third region and the second region;
the second region is disposed between the first region and the fourth region;
the first region has a dopant concentration that is greater than the second region;
the fifth region and the third region are electrically connected;
the sixth region and the seventh region are abutting and electrically connected, and disposed between the third region and the second region;
and
the sixth region and the seventh region are floating.

13 more elements

A protection device structure, comprising:

a first base well region of semiconductor material having a first conductivity type, wherein the first base well region includes a first region and a second region, the first region having a higher dopant concentration than the second region, and the second region is disposed between the first region and a collector region of semiconductor material having the second conductivity type;
a first emitter region of semiconductor material within the first region (150) of the first base well region, the first emitter region having a second conductivity type opposite the first conductivity type, wherein at least a portion of the first region of the first base well region is disposed between the first emitter region and the second region of the first base well region;
a first base contact region of semiconductor material within the first region of the first base well region, the first base contact region having the first conductivity type, wherein at least a portion of the first region of the first base well region is disposed between the first base contact region having the first emitter region, and the first emitter region is disposed between the first base contact region and the second region of the first base well region, and the first emitter region and the first base contact region are electrically connected;
a first floating region of semiconductor material within the first region of the first base well region, the first floating region having the second conductivity type, wherein the first floating region is disposed between the first emitter region and the second region of the first base well region;
and
a second floating region of semiconductor material within the first region of the first base well region, the second floating region having the first conductivity type, wherein the second floating region is disposed between the first floating region and the second region of the first base well region, and the first floating region and the second floating region are electrically connected;
a second base well region of semiconductor material having the first conductivity type, the collector region being disposed between the second region of the first base well region and the second base well region;
a second emitter region of semiconductor material within the second base well region, the second emitter region having the second conductivity type;
and
a second base contact region of semiconductor material within the second base well region, the second base contact region having the first conductivity type, wherein the second base contact region and the second emitter region are electrically connected;
wherein:
at least a portion of the second base well region is disposed between the second base contact region and the second emitter region;
and
the second emitter region is disposed between the second base contact region and the collector region.

11 more elements

A method of fabricating a protection device structure on a semiconductor substrate, the method comprising:

forming a well region of semiconductor material in the semiconductor substrate, the well region having a first conductivity type;
forming a first portion of the well region as a higher dopant concentration than a second portion of the well region, wherein the second portion of the base well region is disposed between the first portion of the base well region and a collector region of semiconductor material having the second conductivity type;
forming an emitter region of semiconductor material within the first portion of the base well region, the emitter region having a second conductivity type opposite the first conductivity type, wherein at least a portion of the first portion of the base well region is disposed between the emitter region and the second portion of the base well region;
forming a base contact region of semiconductor material in the semiconductor substrate, the base contact region having a first conductivity type;
forming a first floating region of semiconductor material within the first portion of the base well region between the emitter region and the second portion of the base well region, the first floating region having the second conductivity type;
forming a second floating region of semiconductor material within the first portion of the base well region between the emitter region and the second portion of the base well region, the second floating region having the first conductivity type, wherein the first floating region and the second floating region are electrically connected;
and
providing an electrical connection between the base contact region and the emitter region.

5 more elements

Dependencies are inferred from the claim text.

Single-stack bipolar-based esd protection device

Life of this patent

Single-stack bipolar-based esd protection device

Life of this patent

Abstract

Claims19