Semiconductor device and layout thereof

A semiconductor device, comprising:

• a first continuous fin formed on a first area of a substrate;
• a second fin formed on the first area, wherein the second fin comprises separate portions that are spaced apart by a first recess;
• and
• a plurality of gates each disposed across the first area and a second area of the substrate, and each disposed across the first continuous fin,
• wherein
• a side of the second area facing the first recess is substantially flat, and
• a first number of gated across the first continuous fin is equal to a sum of s second number of gates across the second fin an a third number of gate across the first recess.

A semiconductor device, comprising:

• a first continuous fin on a substrate;
• a second continuous fin on the substrate;
• a first fin disposed between the first continuous fin and the second continuous fin, wherein the first fin comprises separate portions that are spaced apart by a first recess;
• and
• a plurality of gates each disposed across the first continuous fin and the second continuous fin,
• wherein each of the first continuous fin and the second continuous fin extends from a first gate in the plurality of gates to a second gate in the plurality of gates, and the first fin extends from the first gate to the second gate and is disposed between the first gate and the second gate.