Manufacturing method of semiconductor package
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFENG-CHENG HSU, JUI-PIN HUNG, SHIN-PUU JENG
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Abstract
The present disclosure provides a method for manufacturing a semiconductor package. The method includes providing a carrier, forming a semiconductor die layer over the carrier, and exposing the conductive contact from a close end of the insulating layer by an etching operation. Forming the semiconductor die layer includes forming an insulating layer over the carrier, forming a trench having a close end and an open end in the insulating layer, forming a conductive contact in the trench, and placing a semiconductor die over the insulating layer.
Claims20
A method for manufacturing a semiconductor package, comprising:
- providing a carrier;
- forming an insulating layer over the carrier;
- forming a first semiconductor die layer over the insulating layer, comprising:
- forming a shallow trench in the insulating layer;
- forming a conductive contact in the shallow trench;
- and
- placing a first semiconductor die over the insulating layer;
- and
- exposing the conductive contact from the insulating layer by an etching operation.
A method for manufacturing a semiconductor package, comprising:
- providing a carrier;
- forming a first semiconductor die layer over the carrier, comprising:
- forming a first polymer layer over the carrier;
- forming a shallow trench in the first polymer layer;
- forming a conductive contact in the shallow trench;
- and
- placing first semiconductor die over the first polymer layer;
- and
- exposing the conductive contact from the first polymer layer by an etching operation.
A method for manufacturing a semiconductor package, comprising:
- providing a carrier;
- forming a semiconductor die layer over the carrier, comprising:
- forming an insulating layer over the carrier;
- forming a trench having a close end and an open end in the insulating layer;
- forming a conductive contact in the trench;
- and
- placing a semiconductor die over the insulating layer;
- and
- exposing the conductive contact from the close end of the insulating layer by an etching operation.
Dependencies are inferred from the claim text.