Semiconductor Packages and Methods of Forming the Same

A method comprising:

• forming a first redistribution structure comprising:
• depositing a first dielectric layer over a carrier substrate;
• forming a first conductive feature on the first dielectric layer;
• forming a second conductive feature on the first dielectric layer;
• forming a third conductive feature on the first dielectric layer;
• and
• depositing a second dielectric layer on the first conductive feature, the second conductive feature, and the third conductive feature;
• forming a first via on the first conductive feature;
• forming a second via on the second conductive feature and on the third conductive feature, the second via extending between the second conductive feature and the third conductive feature;
• attaching a die to the first redistribution structure adjacent the first via and the second via;
• encapsulating the die, the first via, and the second via with an encapsulant;
• planarizing the encapsulant, the first via, and the second via;
• and
• forming a second redistribution structure over the encapsulant, the first via, the second via, and the die.

A method comprising:

• depositing a first seed layer on a first dielectric layer;
• plating a first conductive feature and a second conductive feature on the first seed layer;
• depositing a second dielectric layer on the first conductive feature and the second conductive feature;
• forming a first opening in the second dielectric layer, the first opening exposing the first conductive feature, the second conductive feature, and the first dielectric layer;
• depositing a second seed layer on the second dielectric layer and in the first opening;
• plating a first via from portions of the second seed layer in the first opening;
• attaching a die to the second dielectric layer;
• and
• encapsulating the first via and the die with an encapsulant.