Power semiconductor device
AssigneeMitsubishi Electric Corporation
InventorSho KUMADA
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Abstract
Provided is a technique of improving joint strength between a joining layer and a resin. A power semiconductor device includes a wiring member, a semiconductor element, a joining layer joining the wiring member and the semiconductor element to each other, and a resin covering the wiring member, the semiconductor element, and the joining layer. The joining layer includes a first joining layer provided to be adjacent to the resin and having a void filled with the resin. A filler contained in the resin has a maximum width greater than a minimum diameter of the void in the first joining layer.
Claims7
A power semiconductor device comprising:
- a wiring member;
- a semiconductor element;
- a joining layer joining the wiring member and the semiconductor element to each other;
- and
- a resin covering the wiring member, the semiconductor element, and the joining layer,
- wherein the joining layer comprises a first joining layer provided to be adjacent to the resin and comprising a void filled with the resin, and
- a filler contained in the resin has a maximum width greater than a minimum diameter of the void in the first joining layer.
Dependencies are inferred from the claim text.