Semiconductor Device and Method

A method comprising:

• depositing a first dielectric layer;
• forming a conductive shield on the first dielectric layer, the conductive shield comprising an opening and a first channel region extending between the opening and outer periphery of the conductive shield;
• depositing a second dielectric layer on the conductive shield and the first dielectric layer;
• forming a coil on the second dielectric layer, the second dielectric layer extending contiguously between the coil and the conductive shield;
• and
• encapsulating the coil with an encapsulant, top surfaces of the encapsulant and the coil being level.

A device comprising:

• a conductive shield on a first dielectric layer;
• a second dielectric layer on the first dielectric layer and the conductive shield, the first and second dielectric layers surrounding the conductive shield, the second dielectric layer comprising:
• a first portion disposed along an outer periphery of the conductive shield;
• a second portion extending through a center region of the conductive shield;
• and
• a third portion extending through a channel region of the conductive shield, the third portion connecting the first portion to the second portion;
• a coil on the second dielectric layer, the coil disposed over the conductive shield;
• an integrated circuit die on the second dielectric layer, the integrated circuit die disposed outside of the coil;
• and
• an encapsulant surrounding the coil and the integrated circuit die, top surfaces of the encapsulant, the integrated circuit die, and the coil being level.