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US 2019/0103369 A1Published application
Method for forming at least one electrical discontinuity in an integrated circuit, and corresponding integrated circuit
AssigneeSTMicroelectronics (Rousset) SAS
InventorsChristian RIVERO, Pascal FORNARA, Guilhem BOUTON, Mathieu LISART
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Abstract
An integrated circuit includes a semiconductor substrate and a multitude of electrically conductive pads situated between component zones of the semiconductor substrate and a first metallization level of the integrated circuit, respectively. The multitude of electrically conductive pads are encapsulated in an insulating region and include: first pads, in electrical contact with corresponding first component zones, and at least one second pad, not in electrical contact with a corresponding second component zone.
Claims13
A method, comprising:
- producing, above a semiconductor substrate and encapsulated in an insulating region, a multitude of electrically conductive pads situated between source-drain regions of the integrated circuit and a first metallization level of the integrated circuit, respectively;
- wherein producing includes:
- electrically connecting first pads of said multitude of pads with a corresponding first source-drain regions;
- and
- insulating at least one second pad from electrical contact with a corresponding second source-drain region so as to form said at least one electrical discontinuity.
2 more elements
A method, comprising:
- forming source-drain regions in a semiconductor substrate;
- forming a first metallization level on the semiconductor substrate;
- forming a plurality of electrically conductive pads between the source-drain regions and the first metallization level;
- encapsulating the plurality of electrically conductive pads with an insulating region;
- electrically connecting a first pad of the plurality of electrically conductive pads to a corresponding first source-drain region;
- and
- insulating a second pad of the plurality of electrically conductive pads from a corresponding second source-drain region so as to form at least one electrical discontinuity.
4 more elements
Dependencies are inferred from the claim text.