Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• an interlayer insulating film located on the semiconductor substrate;
• a contact plug constituted of a metal, penetrating the interlayer insulating film, and being in contact with the semiconductor substrate;
• a first metal layer covering a surface of the interlayer insulating film and a surface of the contact plug;
• a protective insulating film covering a part of a surface of the first metal layer;
• and
• a second metal layer covering the surface of the first metal layer, being in contact with an edge portion of the protective insulating film, and constituted of a metal different from that of the first metal layer,
• wherein
• the semiconductor device comprises a peripheral region, an active region, and an intermediate region in a view along a thickness direction of the semiconductor device,
• the peripheral region is a region in which the protective insulating film is located;
• the active region is a region in which a plurality of first parts of the contact plug is located;
• and
• the intermediate region is a region which is located between the peripheral region and the active region and in which at least one second part of the contact plug is located,
• the first parts extend toward the edge portion of the protective insulating film, and
• the at least one second part extends along the edge portion of the protective insulating film