Semiconductor device with integrated capacitor and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorCHUNG-YEN CHOU
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Abstract
A semiconductor structure includes a capacitor including a first electrode and a second electrode disposed over and electrically insulated from the first electrode. The semiconductor structure also includes a first conductive via extending through the first electrode and contacting a planar surface of the first electrode. The semiconductor structure further includes a second conductive via extending through the second electrode and contacting a planar surface of the second electrode.
Claims20
A semiconductor structure, comprising:
- a capacitor comprising a first electrode and a second electrode disposed over and electrically insulated from the first electrode;
- a first conductive via extending through the first electrode and contacting a planar surface of the first electrode;
- and
- a second conductive via extending through the second electrode and contacting a planar surface of the second electrode.
A semiconductor structure, comprising:
- a first conductive layer;
- a second conductive layer over the first conductive layer;
- a first dielectric layer between the first conductive layer and the second conductive layer, wherein the first conductive layer is at least partially overlapping the second conductive layer while electrically insulated from the second conductive layer by the first dielectric layer;
- a second dielectric layer over the second conductive layer;
- and
- a first conductive structure comprising a conductive via extending through the second conductive layer, the first dielectric layer and the second dielectric layer, and terminating on a planar surface of the first conductive layer.
A method of manufacturing a semiconductor structure, the method comprising:
- providing a substrate;
- forming a first conductive layer over a substrate;
- depositing a first dielectric layer over the first conductive layer;
- forming a second conductive layer over the first dielectric layer;
- forming a second dielectric layer over the second conductive layer;
- forming a plurality of vias through the first conductive layer, the second conductive layer, the first dielectric layer and the second dielectric layer, at least one of the plurality of vias exposing a planar surface of the first conductive layer;
- and
- forming a conductive structure in the plurality of vias.
Dependencies are inferred from the claim text.